Understanding the operation of quantum dot intermediate band solar cells

被引：35

作者：

Luque, A. ^{[1
]}

Linares, P. G. ^{[1
]}

Antolin, E. ^{[1
]}

Ramiro, I. ^{[1
]}

Farmer, C. D. ^{[2
]}

Hernandez, E. ^{[1
]}

Tobias, I. ^{[1
]}

Stanley, C. R. ^{[3
]}

Marti, A. ^{[1
]}

机构：

[1] Univ Politecn Madrid, Inst Energia Solar, ETSI Telecomunicac, E-28040 Madrid, Spain

[2] Kelvin Nanotechnol Ltd, Glasgow G12 8LT, Lanark, Scotland

[3] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 04期

关键词：

EFFICIENCY; RECOMBINATION;

D O I：

10.1063/1.3684968

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, a model for intermediate band solar cells is built based on the generally understood physical concepts ruling semiconductor device operation, with special emphasis on the behavior at low temperature. The model is compared to J(L)-V-OC measurements at concentrations up to about 1000 suns and at temperatures down to 20 K, as well as measurements of the radiative recombination obtained from electroluminescence. The agreement is reasonable. It is found that the main reason for the reduction of open circuit voltage is an operational reduction of the bandgap, but this effect disappears at high concentrations or at low temperatures. (C) 2012 American Institute of Physics. [doi:10.1063/1.3684968]

引用

页数：12

共 50 条

[21] Improved quantum dot stacking for intermediate band solar cells using strain compensation
Simmonds, Paul J.
Sun, Meng
Laghumavarapu, Ramesh Babu
Liang, Baolai
Norman, Andrew G.
Luo, Jun-Wei
Huffaker, Diana L.
NANOTECHNOLOGY, 2014, 25 (44)
[22] AN EQUIVALENT CIRCUIT MODEL PROPOSED FOR THE INTERMEDIATE BAND NANOSTRUCTURED QUANTUM DOT SOLAR CELLS
Houshmand, Mohammad
Zandi, Mohammad H.
Dehkordi, Somayeh S.
Perez, Mauricio D.
Gorji, Nima E.
MODERN PHYSICS LETTERS B, 2012, 26 (21):
[23] Performance Comparison for Different Material Quantum Dot Single Intermediate Band Solar Cells
Wei, Wensheng
Shan, Feng
Zhao, Shaoyun
Zhang, Qiubo
APPLIED MECHANICS AND MATERIALS II, PTS 1 AND 2, 2014, 477-478 : 404 - 411
[24] Single intermediate-band solar cells of InGaN/InN quantum dot supracrystals
Zhang, Qiubo
Wei, Wensheng
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2013, 113 (01): : 75 - 82
[25] Understanding intermediate-band solar cells
Luque, Antonio
Marti, Antonio
Stanley, Colin
NATURE PHOTONICS, 2012, 6 (03) : 146 - 152
[26] Research Progress of Quantum Dot Intermediate Band Solar Cell
Ma Shu-ying
Shi Lei
Chen Li-dong
Feng Li-zhen
ADVANCED TECHNOLOGIES IN MANUFACTURING, ENGINEERING AND MATERIALS, PTS 1-3, 2013, 774-776 : 2013 - 2016
[27] Theoretical Investigation and Improvement of Characteristics of InAs/GaAs Quantum Dot Intermediate Band Solar Cells by Optimizing Quantum Dot Dimensions
Farhadipour, Farzad
Olyaee, Saeed
Kosarian, Abdolnabi
SYMMETRY-BASEL, 2024, 16 (04):
[28] On inhibiting Auger intraband relaxation in InAs/GaAs quantum dot intermediate band solar cells
Tomic, Stanko
Marti, Antonio
Antolin, Elisa
Luque, Antonio
APPLIED PHYSICS LETTERS, 2011, 99 (05)
[29] New strategies for colloidal-quantum-dot-based intermediate-band solar cells
Califano, Marco
Skibinsky-Gitlin, Erik S.
Gomez-Campos, Francisco M.
Rodriguez-Bolivar, Salvador
JOURNAL OF CHEMICAL PHYSICS, 2019, 151 (15):
[30] Panning ideal In(Ga)As(P)/InGaP quantum dot structures for intermediate band solar cells
Weiner, E. C.
Jakomin, R.
Kawabata, R. M. S.
Pinto, L. D.
Archanjo, B. S.
Pires, M. P.
Souza, P. L.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2024, 57 (08)

← 1 2 3 4 5 →