Understanding the operation of quantum dot intermediate band solar cells

被引:35
|
作者
Luque, A. [1 ]
Linares, P. G. [1 ]
Antolin, E. [1 ]
Ramiro, I. [1 ]
Farmer, C. D. [2 ]
Hernandez, E. [1 ]
Tobias, I. [1 ]
Stanley, C. R. [3 ]
Marti, A. [1 ]
机构
[1] Univ Politecn Madrid, Inst Energia Solar, ETSI Telecomunicac, E-28040 Madrid, Spain
[2] Kelvin Nanotechnol Ltd, Glasgow G12 8LT, Lanark, Scotland
[3] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland
关键词
EFFICIENCY; RECOMBINATION;
D O I
10.1063/1.3684968
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, a model for intermediate band solar cells is built based on the generally understood physical concepts ruling semiconductor device operation, with special emphasis on the behavior at low temperature. The model is compared to J(L)-V-OC measurements at concentrations up to about 1000 suns and at temperatures down to 20 K, as well as measurements of the radiative recombination obtained from electroluminescence. The agreement is reasonable. It is found that the main reason for the reduction of open circuit voltage is an operational reduction of the bandgap, but this effect disappears at high concentrations or at low temperatures. (C) 2012 American Institute of Physics. [doi:10.1063/1.3684968]
引用
收藏
页数:12
相关论文
共 50 条
  • [1] New Hamiltonian for a better understanding of the quantum dot intermediate band solar cells
    Luque, A.
    Marti, A.
    Antolin, E.
    Linares, P. G.
    Tobias, I.
    Ramiro, I.
    Hernandez, E.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (08) : 2095 - 2101
  • [2] ADVANCES IN QUANTUM DOT INTERMEDIATE BAND SOLAR CELLS
    Antolin, E.
    Marti, A.
    Linares, P. G.
    Ramiro, I.
    Hernandez, E.
    Farmer, C. D.
    Stanley, C. R.
    Luque, A.
    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010,
  • [3] InAs/GaAs and InAlGaAs/AlGaAs quantum dot based solar cells for intermediate band operation
    Tasco, V.
    Passaseo, A.
    Creti, A.
    Montagna, G.
    Lomascolo, M.
    Tarantini, I.
    Salhi, A.
    AI-Muhanna, A.
    2014 FOTONICA AEIT ITALIAN CONFERENCE ON PHOTONICS TECHNOLOGIES, 2014,
  • [4] Recent progress on quantum dot intermediate band solar cells
    Okada, Yoshitaka
    Yoshida, Katsuhisa
    Shoji, Yasushi
    Sogabe, Tomah
    IEICE ELECTRONICS EXPRESS, 2013, 10 (17):
  • [5] Modelling of quantum dot intermediate band solar cells: effect of intermediate band linewidth broadening
    Wang, Qiao-Yi
    Rorison, Judy
    IET OPTOELECTRONICS, 2014, 8 (02) : 81 - 87
  • [6] Realistic quantum design of silicon quantum dot intermediate band solar cells
    Hu, Weiguo
    Igarashi, Makoto
    Lee, Ming-Yi
    Li, Yiming
    Samukawa, Seiji
    NANOTECHNOLOGY, 2013, 24 (26)
  • [7] Performance optimization of In(Ga)As quantum dot intermediate band solar cells
    Yang, Guiqiang
    Liu, Wen
    Bao, Yidi
    Chen, Xiaoling
    Ji, Chunxue
    Wei, Bo
    Yang, Fuhua
    Wang, Xiaodong
    DISCOVER NANO, 2023, 18 (01)
  • [8] The Role of Defects on the Performance of Quantum Dot Intermediate Band Solar Cells
    Collazos, Lida Janeth
    M. Al Huwayz, Maryam
    Jakomin, Roberto
    Micha, Daniel N.
    Dornelas Pinto, Luciana
    M. S. Kawabata, Rudy
    Pires, Mauricio P.
    Henini, Mohamed
    Souza, Patricia L.
    IEEE JOURNAL OF PHOTOVOLTAICS, 2021, 11 (04): : 1022 - 1031
  • [9] Quantum Engineering of InAs/GaAs Quantum Dot Based Intermediate Band Solar Cells
    Beattie, Neil S.
    See, Patrick
    Zoppi, Guillaume
    Ushasree, Palat M.
    Duchamp, Martial
    Farrer, Ian
    Ritchie, David A.
    Tomic, Stanko
    ACS PHOTONICS, 2017, 4 (11): : 2745 - 2750
  • [10] AlGaInAs quantum dot solar cells: tailoring quantum dots for intermediate band formation
    Schneider, C.
    Kremling, S.
    Tarakina, N. V.
    Braun, T.
    Adams, M.
    Lermer, M.
    Reitzenstein, S.
    Worschech, L.
    Kamp, M.
    Hoefling, S.
    Forchel, A.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (03)