Understanding the operation of quantum dot intermediate band solar cells

被引：36

作者：

Luque, A. ^{[1
]}

Linares, P. G. ^{[1
]}

Antolin, E. ^{[1
]}

Ramiro, I. ^{[1
]}

Farmer, C. D. ^{[2
]}

Hernandez, E. ^{[1
]}

Tobias, I. ^{[1
]}

Stanley, C. R. ^{[3
]}

Marti, A. ^{[1
]}

机构：

[1] Univ Politecn Madrid, Inst Energia Solar, ETSI Telecomunicac, E-28040 Madrid, Spain

[2] Kelvin Nanotechnol Ltd, Glasgow G12 8LT, Lanark, Scotland

[3] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 04期

关键词：

EFFICIENCY; RECOMBINATION;

D O I：

10.1063/1.3684968

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, a model for intermediate band solar cells is built based on the generally understood physical concepts ruling semiconductor device operation, with special emphasis on the behavior at low temperature. The model is compared to J(L)-V-OC measurements at concentrations up to about 1000 suns and at temperatures down to 20 K, as well as measurements of the radiative recombination obtained from electroluminescence. The agreement is reasonable. It is found that the main reason for the reduction of open circuit voltage is an operational reduction of the bandgap, but this effect disappears at high concentrations or at low temperatures. (C) 2012 American Institute of Physics. [doi:10.1063/1.3684968]

引用

页数：12

共 38 条

[1]

[Anonymous], 1967, PHYS TECHNOLOGY SEMI

[2]

Antolín E, 2010, IEEE PHOT SPEC CONF

[3] Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell [J].

Antolin, E. ;

Marti, A. ;

Farmer, C. D. ;

Linares, P. G. ;

Hernandez, E. ;

Sanchez, A. M. ;

Ben, T. ;

Molina, S. I. ;

Stanley, C. R. ;

Luque, A. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (06)

[4]

Antolin E., QUANTUM DOT SO UNPUB

[5] ABSOLUTE LIMITING EFFICIENCIES FOR PHOTOVOLTAIC ENERGY-CONVERSION [J].

ARAUJO, GL ;

MARTI, A .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1994, 33 (02) :213-240

[6] AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs [J].

Blokhin, S. A. ;

Sakharov, A. V. ;

Nadtochy, A. M. ;

Pauysov, A. S. ;

Maximov, M. V. ;

Ledentsov, N. N. ;

Kovsh, A. R. ;

Mikhrin, S. S. ;

Lantratov, V. M. ;

Mintairov, S. A. ;

Kaluzhniy, N. A. ;

Shvarts, M. Z. .

SEMICONDUCTORS, 2009, 43 (04) :514-518

[7]

Boer K., 1990, Survey of Semiconductor Phyics

[8] Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells [J].

Canovas, E. ;

Marti, A. ;

Lopez, N. ;

Antolin, E. ;

Linares, P. G. ;

Farmer, C. D. ;

Stanley, C. R. ;

Luque, A. .

THIN SOLID FILMS, 2008, 516 (20) :6943-6947

[9] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[10] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

HENRY, CH ;

LANG, DV .

PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

← 1 2 3 4 →