Thickness dependence on the dielectric properties of BaTiO3/SrTiO3-multilayers

被引:22
作者
Koebernik, G
Haessler, W
Pantou, R
Weiss, F
机构
[1] IFW Dresden, D-01171 Dresden, Germany
[2] Inst Natl Polytech Grenoble, LMGP, F-38402 St Martin Dheres, France
关键词
superlattices; ferroelectric properties; epitaxy; laser ablation;
D O I
10.1016/j.tsf.2003.10.031
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We prepared highly textured SrTiO3/BaTiO3-miltilayers with artificial lattice structure by pulsed laser deposition in off-axis geometry on SrTiO3:Nb-single crystals. In this paper we compare the structural and dielectric properties of symmetric superlattice structures of SrTiO3/BaTiO3 layers with (Ba0.5Sr0.5)TiO3 solid solutions of the same thickness. The dielectric constant (DC) of the multilayers is lower in comparison to the solid solutions, the thickness dependence is weaker and the influence of an external bias field on the multilayer films is weaker as well. The temperature dependence on the DC of BaTiO3/SrTiO3-superlattices shows a broader transition peak and the Curie temperature is shifted slightly to lower values. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:80 / 85
页数:6
相关论文
共 19 条
[1]   Dielectric properties in heteroepitaxial Ba0.6Sr0.4TiO3 thin films:: Effect of internal stresses and dislocation-type defects [J].
Canedy, CL ;
Li, H ;
Alpay, SP ;
Salamanca-Riba, L ;
Roytburd, AL ;
Ramesh, R .
APPLIED PHYSICS LETTERS, 2000, 77 (11) :1695-1697
[2]   Control and elimination of biaxial strain in laser-ablated epitaxial BaxSr1-xTiO3 films [J].
Carlson, CM ;
Parilla, PA ;
Rivkin, TV ;
Perkins, JD ;
Ginley, DS .
APPLIED PHYSICS LETTERS, 2000, 77 (20) :3278-3280
[3]   Influence of strain on microwave dielectric properties of (Ba,Sr)TiO3 thin films [J].
Chang, WT ;
Gilmore, CM ;
Kim, WJ ;
Pond, JM ;
Kirchoefer, SW ;
Qadri, SB ;
Chirsey, DB ;
Horwitz, JS .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (06) :3044-3049
[4]   Stress relaxation and misfit dislocation nucleation in the growth of misfitting films: A molecular dynamics simulation study [J].
Dong, L ;
Schnitker, J ;
Smith, RW ;
Srolovitz, DJ .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (01) :217-227
[5]   Giant permittivity in epitaxial ferroelectric heterostructures [J].
Erbil, A ;
Kim, Y ;
Gerhardt, RA .
PHYSICAL REVIEW LETTERS, 1996, 77 (08) :1628-1631
[6]   OFF-AXIS LASER DEPOSITION OF YBA2CU3O7-DELTA THIN-FILMS [J].
HOLZAPFEL, B ;
ROAS, B ;
SCHULTZ, L ;
BAUER, P ;
SAEMANNISCHENKO, G .
APPLIED PHYSICS LETTERS, 1992, 61 (26) :3178-3180
[7]   ATOMIC LAYER GROWTH OF OXIDE THIN-FILMS WITH PEROVSKITE-TYPE STRUCTURE BY REACTIVE EVAPORATION [J].
IIJIMA, K ;
TERASHIMA, T ;
BANDO, Y ;
KAMIGAKI, K ;
TERAUCHI, H .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) :2840-2845
[8]   Dielectric properties of strained (Ba, Sr)TiO3 thin films epitaxially grown on Si with thin yttria-stabilized zirconia buffer layer [J].
Jun, SJ ;
Kim, YS ;
Lee, J ;
Kim, YW .
APPLIED PHYSICS LETTERS, 2001, 78 (17) :2542-2544
[9]  
Kawai T, 1998, J KOREAN PHYS SOC, V32, pS1787
[10]   Large nonlinear dielectric properties of artificial BaTiO3/SrTiO3 superlattices [J].
Kim, J ;
Kim, Y ;
Kim, YS ;
Lee, J ;
Kim, L ;
Jung, D .
APPLIED PHYSICS LETTERS, 2002, 80 (19) :3581-3583