Single Si dopants in GaAs studied by scanning tunneling microscopy and spectroscopy

被引:25
作者
Wijnheijmer, A. P. [1 ]
Garleff, J. K. [1 ]
Teichmann, K. [2 ]
Wenderoth, M. [2 ]
Loth, S. [2 ,3 ]
Koenraad, P. M. [1 ]
机构
[1] Eindhoven Univ Technol, Dept Appl Phys, COBRA Interuniv Res Inst, NL-5600 MB Eindhoven, Netherlands
[2] Univ Gottingen, Inst Phys 4, D-37077 Gottingen, Germany
[3] IBM Res Div, Almaden Res Ctr, San Jose, CA 95120 USA
来源
PHYSICAL REVIEW B | 2011年 / 84卷 / 12期
关键词
RELAXED; 110; SURFACE; DOPED GAAS; SCALE PROPERTIES; STATES; SEMICONDUCTORS; IDENTIFICATION; MOSFETS; PROBE; TIP;
D O I
10.1103/PhysRevB.84.125310
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a comprehensive scanning tunneling microscopy and spectroscopy study of individual Si dopants in GaAs. We explain all the spectroscopic peaks and their voltage dependence in the band gap and in the conduction band. We observe both the filled and empty donor state. Donors close to the surface, which have an enhanced binding energy, show a second ionization ring, corresponding to the negatively charged donor D-. The observation of all predicted features at the expected spectral position and with the expected voltage-distance dependence confirms their correct identification and the semiquantitative analyses of their energetic positions.
引用
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页数:7
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