Single Si dopants in GaAs studied by scanning tunneling microscopy and spectroscopy

被引：26

作者：

Wijnheijmer, A. P. ^{[1
]}

Garleff, J. K. ^{[1
]}

Teichmann, K. ^{[2
]}

Wenderoth, M. ^{[2
]}

Loth, S. ^{[2
,3
]}

Koenraad, P. M. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, COBRA Interuniv Res Inst, NL-5600 MB Eindhoven, Netherlands

[2] Univ Gottingen, Inst Phys 4, D-37077 Gottingen, Germany

[3] IBM Res Div, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 12期

关键词：

RELAXED; 110; SURFACE; DOPED GAAS; SCALE PROPERTIES; STATES; SEMICONDUCTORS; IDENTIFICATION; MOSFETS; PROBE; TIP;

D O I：

10.1103/PhysRevB.84.125310

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a comprehensive scanning tunneling microscopy and spectroscopy study of individual Si dopants in GaAs. We explain all the spectroscopic peaks and their voltage dependence in the band gap and in the conduction band. We observe both the filled and empty donor state. Donors close to the surface, which have an enhanced binding energy, show a second ionization ring, corresponding to the negatively charged donor D-. The observation of all predicted features at the expected spectral position and with the expected voltage-distance dependence confirms their correct identification and the semiquantitative analyses of their energetic positions.

引用

页数：7

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