Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

被引：37

作者：

Fete, A. ^{[1
]}

Cancellieri, C. ^{[1
]}

Li, D. ^{[1
]}

Stornaiuolo, D. ^{[1
]}

Caviglia, A. D. ^{[1
]}

Gariglio, S. ^{[1
]}

Triscone, J. -M. ^{[1
]}

机构：

[1] Univ Geneva, Dept Quantum Matter Phys, CH-1211 Geneva 4, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 05期

基金：

瑞士国家科学基金会; 欧洲研究理事会;

关键词：

OXIDE HETEROSTRUCTURES;

D O I：

10.1063/1.4907676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the electronic properties of the 2D electron liquid present at the LaAlO3/SrTiO3 interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 degrees C exhibit the highest low temperature mobility (approximate to 10 000 cm(2) V-1 s(-1)) and the lowest sheet carrier density (approximate to 5 x 10(12) cm(-2)). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800- 900 degrees C) display carrier densities in the range of approximate to 2 - 5 x 10(13) cm(-2) and mobilities of approximate to 1000 cm(2) V-1 s(-1) at 4K. Reducing their carrier density by field effect to 8 x 10(12) cm(-2) lowers their mobilities to approximate to 50 cm(2) V-1 s(-1) bringing the conductance to the weak-localization regime. (C) 2015 AIP Publishing LLC.

引用

页数：4

共 38 条

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