Raman spectroscopy study of β-irradiated silica glass

被引:68
作者
Boizot, B
Agnello, S
Reynard, B
Boscaino, R
Petite, G
机构
[1] Ecole Polytech, CEA, DSM, DRECAM,LSI,CNRS,UMR 7642, F-91128 Palaiseau, France
[2] Univ Palermo, INFM, I-90123 Palermo, Italy
[3] Univ Palermo, Dip Sci Fis & Astron, I-90123 Palermo, Italy
[4] ENS Lyon, Lab Sci Terre, CNRS, UMR 5570, F-69634 Lyon 7, France
关键词
D O I
10.1016/S0022-3093(03)00334-X
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Natural and synthetic silica glass samples with different OH content have been submitted to P-irradiation at different doses from 106 to 5 x 10(9) Gy in a Van de Graaff accelerator. Structural changes under irradiation have been analyzed by Raman spectroscopy. The main findings are: (i) a decrease of the Si-O-Si angular dispersion and the average Si-O-Si angle as a function of dose and (ii) an increase of number of three-membered SiO4 ring concentration during irradiation. These results show therefore that purely electronic excitation from beta-irradiation induces in a-SiO2 small but significant structural changes of the SiO4 membered ring statistics (size and dispersion), consistent with a slight densification. (C) 2003 Elsevier B.V. All rights reserved.
引用
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页码:22 / 28
页数:7
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