Tin induced crystallisation of hydrogenated amorphous silicon thin films

被引：14

作者：

Jeon, M. ^{[1
]}

Jeong, C. ^{[2
]}

Kamisako, K. ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Dept Elect & Informat Engn, Tokyo 1848588, Japan

[2] Korea Inst Ind Technol, Gwangju Res Ctr, Energy & Appl Opt Team, Kwangju 506824, South Korea

来源：

MATERIALS SCIENCE AND TECHNOLOGY | 2010年 / 26卷 / 07期

关键词：

Tin metal; Metal induced crystallisation; Hydrogenated amorphous silicon; X-ray diffraction; Scanning electron microscopy; METAL-INDUCED CRYSTALLIZATION; ASSISTED DEPOSITION METHOD; POLYCRYSTALLINE SILICON; NANOWIRES; TRANSISTOR;

D O I：

10.1179/026708309X12454008169500

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present article focuses on the effect of annealing temperatures about the Sn induced crystallisation of hydrogenated amorphous Si (a-Si:H) thin films, which are used to fabricate polycrystalline Si (poly-Si) film. The a-Si:H thin films are coated onto Sn metal thin film and subsequently annealed from various temperatures. These are crystallised by annealing for 1 h at 300 degrees C and identified by XRD spectroscopy for the investigation of each phase. Process temperature for crystallisation should not be high because a eutectic temperature of Si-Sn is similar to 232 degrees C. Si crystal patterns of the prepared samples showed the tendency of changing from (111) to (002) with increasing temperature. It indicates that the crystal phases depend strongly on the annealing temperature of Sn induced a-Si:H thin films for the preparation of poly-Si film. Semiconducting type of Sn induced poly-Si films were shown in n-type through Hall effect measurement.

引用

页码：875 / 878

页数：4

共 13 条

[1] A new approach for form polycrystalline silicon by excimer laser irradiation with a wide range of energies [J].

Hara, A ;

Kitahara, K ;

Nakajima, K ;

Okabe, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12A) :6624-6628

[2] CRYSTALLIZATION OF AMORPHOUS-SILICON DURING THIN-FILM GOLD REACTION [J].

HULTMAN, L ;

ROBERTSSON, A ;

HENTZELL, HTG ;

ENGSTROM, I ;

PSARAS, PA .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3647-3655

[3] RECRYSTALLIZATION OF AMORPHIZED POLYCRYSTALLINE SILICON FILMS ON SIO2 - TEMPERATURE-DEPENDENCE OF THE CRYSTALLIZATION PARAMETERS [J].

IVERSON, RB ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) :1675-1681

[4] Synthesis of silicon nanowires after hydrogen radical treatment [J].

Jeon, Minsung ;

Kamisako, Koichi .

MATERIALS LETTERS, 2008, 62 (23) :3903-3905

[5] Synthesis of gallium-catalyzed silicon nanowires by hydrogen radical-assisted deposition method [J].

Jeon, Minsung ;

Tomitsuka, Yoshihiro ;

Kamisako, Koichi .

JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, 2008, 14 (06) :836-840

[6] Characterization of Tin-catalyzed silicon nanowires synthesized by the hydrogen radical-assisted deposition method [J].

Jeon, Minsung ;

Uchiyama, Hisashi ;

Kainisako, Koichi .

MATERIALS LETTERS, 2009, 63 (02) :246-248

[7] Scanning rapid thermal annealing process for poly silicon thin film transistor [J].

Kim, TK ;

Kim, GB ;

Yoon, YG ;

Kim, CH ;

Lee, BI ;

Joo, SK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (10) :5773-5775

[8] In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon [J].

Knaepen, W. ;

Detavernier, C. ;

Van Meirhaeghe, R. L. ;

Sweet, J. Jordan ;

Lavoie, C. .

THIN SOLID FILMS, 2008, 516 (15) :4946-4952

[9]

Lee SW, 1996, IEEE ELECTR DEVICE L, V17, P160, DOI 10.1109/55.485160

[10]

Olesinski R., 1984, J PHASE EQUILIB, V5, P273, DOI DOI 10.1007/BF02868552

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