Hole mobility in wurtzite InN

被引：33

作者：

Ma, N. ^{[1
]}

Wang, X. Q. ^{[1
]}

Liu, S. T. ^{[1
]}

Chen, G. ^{[1
]}

Pan, J. H. ^{[1
]}

Feng, L. ^{[1
]}

Xu, F. J. ^{[1
]}

Tang, N. ^{[1
]}

Shen, B. ^{[1
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 19期

基金：

中国国家自然科学基金;

关键词：

TRANSPORT;

D O I：

10.1063/1.3592257

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hole mobility in wurtzite InN at low electric fields is studied by an ensemble Monte Carlo calculation. Scatterings of holes by polar optical phonons, nonpolar optical phonons, acoustic phonons, ionized and neutral impurities, and threading dislocations are taken into account. Mobility of holes is similar to 220 cm(2) / V s at 300 K in the InN, where holes are only scattered by the lattice. It decreases to 20-70 cm(2) / V s when the present quality of InN with threading dislocation density of similar to 10(10) cm(-2) and residual donor concentration of over 10(17) cm-(3) is considered. The calculated mobility coincides well with the recent experimental observation. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3592257]

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页数：3

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