Ferroelectric Properties and Microstructures of Pr6O11-doped Bi4Ti3O12 Thin Films

被引：1

作者：

Chen, M. ^{[1
]}

Mei, X. A. ^{[1
]}

Su, K. L. ^{[1
]}

Cai, A. H. ^{[1
]}

Liu, J. ^{[1
]}

An, W. K. ^{[1
]}

Zhou, Y. ^{[1
]}

机构：

[1] Hunan Inst Sci & Technol, Sch Phys & Elect, Yueyang 414000, Peoples R China

来源：

TESTING AND EVALUATION OF INORGANIC MATERIALS I | 2011年 / 177卷

关键词：

Ferroelectric; Bismuth titanate; Film; Doping; ELECTRICAL CHARACTERISTICS;

D O I：

10.4028/www.scientific.net/AMR.177.211

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pr6O11-doped bismuth titanate (BixPryTi3O12 BPT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BPT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. Pr doping into Bi4Ti3O12(BIT) causes a large shift of the Curie temperature (T-C) of paraelectric-ferroelectric phase transition of BIT from 675 degrees C to lower temperature and improvement in dielectric properties. The experimental results indicate that Pr doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization (P-r) and coercive field (E-c) of the BPT film with y=0.9 were 35 mu C/cm(2) and 80 kV/cm, respectively. After 3 x 10(10) switching cycles, 20% degradation of P-r is observed in the film.

引用

页码：211 / 214

页数：4