Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions

被引：3

作者：

Chun, Byong Sun ^{[1
]}

Hwang, Jae Youn ^{[2
]}

Rhee, Jang Roh ^{[2
]}

Kim, Taewan ^{[3
]}

Saito, Shin ^{[4
]}

Yoshimura, Satoru ^{[4
]}

Tsunoda, Masakiyo ^{[4
]}

Takahashi, Migaku ^{[4
]}

Kim, Young Keun ^{[1
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea

[2] Sookmyung Womens Univ, Dept Phys, Seoul 140742, South Korea

[3] Samsung Adv Inst Technol, Mat & Devices Lab, Gyeonggi Do 449712, South Korea

[4] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2006年 / 303卷 / 02期

关键词：

Magnetic tunnel junctions; Amorphous ferromagnetic materials; CoFeSiB;

D O I：

10.1016/j.jmmm.2006.01.041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetic tunnel junctions (MTJs) comprising amorphous Co70.5Fe4.5Si15B10, possessing low saturation magnetization of 560 emu/cm(3), as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs. (C) 2006 Elsevier B.V. All rights reserved.

引用

页码：E223 / E225

页数：3

共 5 条

[1]

[Anonymous], LLG MICR SIM

[2]

Chun B.S., 2006, J MAGN MAGN IN PRESS

[3] Magnetization switching and tunneling magnetoresistance effects of synthetic antiferromagnet free layers consisting of amorphous NiFeSiB [J].

Chun, BS ;

Yoo, I ;

Kim, YK ;

Hwang, JY ;

Rhee, JR ;

Kim, T ;

Park, W .

APPLIED PHYSICS LETTERS, 2005, 87 (08)

[4] Technological issues for high-density MRAM development [J].

Kim, T ;

Kim, YK ;

Park, W .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 282 :232-236

[5] Magnetization switching and tunneling magnetoresistance effects of MTJs']Js with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB [J].

Rhee, JR ;

Hwang, JY ;

Kim, SS ;

Kim, AY ;

Chun, BS ;

Yoo, IS ;

Oh, BS ;

Kim, YK ;

Kim, TW ;

Park, WJ .

IEEE TRANSACTIONS ON MAGNETICS, 2005, 41 (10) :2685-2687

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