Frequency Tuning in Integrated InGaAsP/InP Ring Mode-Locked Lasers

被引：5

作者：

Parker, John S. ^{[1
]}

Binetti, Pietro R. A. ^{[1
]}

Hung, Yung-Jr ^{[2
]}

Coldren, Larry A. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2012年 / 30卷 / 09期

基金：

美国国家科学基金会;

关键词：

Mode-locked laser; pulsed lasers; quantum well laser; ring laser; semiconductor laser; SPEED OPTICAL COMMUNICATION; TRANSMITTER; INP;

D O I：

10.1109/JLT.2012.2184264

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate for the first time, continuous frequency tuning >40 MHz using symmetric phase tuning regions in an InGaAsP/InP 18 GHz passively mode-locked ring laser. Frequency tuning is achieved through current injection into passive waveguides, via the free-carrier plasma effect, which is enhanced by the concurrent increase in cavity losses from free-carrier absorption. Stable mode-locking with similar to 1 ps pulse-width is realized from -2.5 to -7.5 V bias on the saturable absorber and 170 to 290 mA drive current. The average RF power is 50 dB above the noise level over this regime.

引用

页码：1278 / 1283

页数：6

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