X-ray photoelectron spectroscopy study of cubic boron nitride single crystals grown under high pressure and high temperature

被引：19

作者：

Hou, Lixin ^{[1
,2
]}

Chen, Zhanguo ^{[1
]}

Liu, Xiuhuan ^{[3
]}

Gao, Yanjun ^{[1
]}

Jia, Gang ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

[2] Changchun Univ Sci & Technol, Coll Opt & Elect Informat, Changchun 130012, Peoples R China

[3] Jilin Univ, Coll Commun Engn, Changchun 130012, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 08期

基金：

美国国家科学基金会;

关键词：

Cubic boron nitride; XPS; Single crystal; Impurities; Defects; THIN-FILMS; CBN; XPS; DEPOSITION; ENERGETICS; VACANCIES; DEFECTS; DIAMOND; BN;

D O I：

10.1016/j.apsusc.2011.12.032

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The defects, impurities and their bonding states of unintentionally doped cubic boron nitride (cBN) single crystals were investigated by X-ray photoelectron spectroscopy (XPS). The results indicate that nitrogen vacancy (V-N) is the main native defect of the cBN crystals since the atomic ratio of B:N is always larger than 1 before Ar ion sputtering. After sputter cleaning, around 6 at% carbon, which probably comes from the growth chamber, remains in the samples as the main impurity. Carbon can substitute nitrogen lattice site and form the bonding states of C-B-N or C-B, which can be verified by the XPS spectra of C1s, B1s and N1s. The C impurity (acceptor) and N vacancy (donor) can compose the donor-acceptor complex to affect the electrical and optical properties of cBN crystals. (C) 2011 Elsevier B. V. All rights reserved.

引用

页码：3800 / 3804

页数：5

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