Optical, scintillation and thermally stimulated luminescence properties of Sc2Si2O7:Ce single crystal grown by floating zone method

被引：7

作者：

Feng, He ^{[1
]}

Chou, Mitch M. C. ^{[1
]}

Chen, Chenlong ^{[1
]}

Xu, Wusheng ^{[2
]}

Liu, Zhongshi ^{[2
]}

Ren, Guohao ^{[3
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan

[2] GE China Res & Dev Ctr Co Ltd, Shanghai 201203, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China

来源：

OPTICAL MATERIALS | 2012年 / 34卷 / 07期

基金：

上海市自然科学基金; 中国国家自然科学基金;

关键词：

Single crystal growth; Cerium doped scandium pyrosilicate; Optical properties; Scintillation properties; Thermally stimulated luminescence; INORGANIC SCINTILLATORS; THERMOLUMINESCENCE; LU2SI2O7-CE3+;

D O I：

10.1016/j.optmat.2011.12.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single crystal of the Sc2Si2O7:Ce (SPS:Ce) was grown by floating zone method. The crystal structure is confirmed to be thortveitite with space group C2/m by X-ray diffraction measurement. The vacuum ultra violet (VUV), photoluminescence excitation (PLE) and photoluminescence (PL) spectra, fluorescence decay time and X-ray excited luminescence spectra were studied. Five sublevels of Ce3+ 5d level are observed through the VUV PLE spectra. The PL is dominated by the fast Ce3+. 5d(1)4f(0) -5d(0)4f(1) transition peaking at 386 nm with a single exponential decay of 33 ns. The traps in SPS:Ce were also studied through the thermally stimulated luminescence measurement. A trap with level depth 1.16 eV with a kinetics order of 1.52 is found in the SPS:Ce crystal. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1003 / 1006

页数：4

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