COM2 SiGe modular BiCMOS technology for digital, mixed-signal, and RF applications

被引：20

作者：

Carroll, M ^{[1
]}

Ivanov, T ^{[1
]}

Kuehne, S ^{[1
]}

Chu, J ^{[1
]}

King, C ^{[1
]}

Frei, M ^{[1
]}

Kastrapasqua, M ^{[1
]}

Johnson, R ^{[1
]}

Ng, K ^{[1
]}

Moinian, S ^{[1
]}

Martin, S ^{[1
]}

Huang, C ^{[1
]}

Hsu, T ^{[1
]}

Nguyen, D ^{[1
]}

Singh, R ^{[1
]}

Fritzinger, L ^{[1
]}

Esry, T ^{[1
]}

Moller, W ^{[1
]}

Kane, B ^{[1
]}

Abeln, G ^{[1
]}

Hwang, D ^{[1
]}

Orphee, D ^{[1
]}

Lytle, S ^{[1
]}

Roby, M ^{[1
]}

Vitkavage, D ^{[1
]}

Chesire, D ^{[1
]}

Ashton, R ^{[1
]}

Shuttleworth, D ^{[1
]}

Thoma, M ^{[1
]}

Choi, S ^{[1
]}

Lewellen, S ^{[1
]}

Mason, P ^{[1
]}

Lai, T ^{[1
]}

Hsieh, H ^{[1
]}

Dennis, D ^{[1
]}

Harris, E ^{[1
]}

Thomas, S ^{[1
]}

Gregor, R ^{[1
]}

Sana, P ^{[1
]}

Wu, W ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Orlando, FL USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904279

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The COM2 SiGe modular BiCMOS technology has been developed to allow efficient design and manufacturing of digital, mixed-signal, and RF integrated circuits, as well as enabling system-on-chip (SOC) integration. The technology is based on the 0.16 mum COM2 digital CMOS process which features 1.5V NMOS and PMOS transistors with 2.4nm gate oxide, 0.135 mum gate length, and up to 7 metal levels. Technology enhancement modules including dense SRAM, SiGe NPN bipolar transistor, and a variety of passive components have been developed to allow the COM2 technology to be cost-effectively optimized for a wide range of applications.

引用

页码：145 / 148

页数：4

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