Few-layer epitaxial graphene with large domains on C-terminated 6H-SiC

被引：9

作者：

Hu, Hailong ^{[2
]}

Ruammaitree, Akkawat ^{[1
]}

Nakahara, Hitoshi ^{[1
]}

Asaka, Koji ^{[1
]}

Saito, Yahachi ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648603, Japan

[2] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350002, Peoples R China

来源：

SURFACE AND INTERFACE ANALYSIS | 2012年 / 44卷 / 06期

关键词：

epitaxial graphene; few-layer; RHEED; Raman spectroscopy; AFM; RAMAN-SCATTERING; GRAPHITIZATION; GROWTH; SI;

D O I：

10.1002/sia.4814

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Few-layer graphene with average thickness of 3 monolayers has been prepared on 6H-SiC(0001) via annealing in argon ambience. The surface structure and morphology are characterized by reflection high-energy electron diffraction, Raman spectroscopy and atomic force microscopy (AFM). Raman mapping measurement reveals that the graphene layer has high uniformity in doping concentration and strains. The SiC surface after graphitization shows steps with height?<?9?nm, and graphene grows continuously across these steps to form large domains. AFM phase images indicate that the SiC surface is completely covered by graphene. Copyright (c) 2012 John Wiley & Sons, Ltd.

引用

页码：793 / 796

页数：4

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