Magnetic anisotropy switching in heavily-Fe-doped high-Curie-temperature ferromagnetic semiconductor (Ga0.7,Fe0.3)Sb with a critical thickness

被引：0
|
作者：
Goel, Shobhit [1 ]
Anh, Le Duc [1 ,2 ]
Tu, Nguyen Thanh [1 ]
Ohya, Shinobu [1 ,2 ,3 ]
Tanaka, Masaaki [1 ,3 ]
机构：
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Tokyo, Japan
[2] Univ Tokyo, Inst Engn Innovat, Tokyo, Japan
[3] Univ Tokyo, Ctr Spintron Res Network CSRN, Tokyo, Japan
来源：
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) | 2019年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：1
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