Optical properties of GaN and GaN/AlN nanowires: the effect of doping and structural defects

被引:0
作者
Rigutti, L. [1 ]
Fortuna, F. [2 ]
Tchernycheva, M. [1 ]
Bugallo, A. De Luna [1 ]
Jacopin, G. [1 ]
Julien, F. H. [1 ]
Chou, S. T. [3 ]
Lin, Y. T. [3 ]
Tu, L. W. [3 ,4 ]
Harmand, J. -C.
机构
[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, Bat 220, F-91405 Orsay, France
[2] Univ Paris 09, Ctr Spectrometrie Nucl Spectroscop Masse, F-914045 Orsay, France
[3] Natl Sun Yat Sen Univ, Ctr Nanosci & Namotechnol, Dept Phys, Kaohsiung 80424, Taiwan
[4] CNRS, Lab Photon & Namostruct, F-91460 Marcoussis, France
来源
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期
关键词
GaN; GaN/AlN; nanowires; doping; defects; photoluminescence; MOLECULAR-BEAM EPITAXY; LUMINESCENCE;
D O I
10.1002/pssc.201060094
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on the optical properties of different classes of nitride-based nanowire systems grown by plasma assisted molecular beam epitaxy (PA-MBE) on Si(111) substrates at temperature T=780 degrees C. Micro-photoluminescence (micro-PL) spectroscopy has been performed on homogeneous GaN nanowires with different doping type and distribution, as well as on nanowires containing AlN/GaN heterostructures. The Micro-PL spectrum of the individual nanowire has been correlated to the transmission electron microscopy (TEM) image of the same nano-object, in order to investigate the influence of structural defects on the radiative emission lines. Doping is found to enhance the sub-bandgap radiative paths such as the donor-acceptor pair (DAP) related lines found at energies below E=3.26 eV. Other sub-bandgap emission lines, particularly those centred around 3.41-3.42 eV, are related to surface states and are the dominant emission in systems of coalesced nanowires. Finally, the presence of extended line defects has been correlated to a strong reduction of the PL radiative efficiency. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页数:3
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