Swift heavy ion irradiation effect on the surface of sapphire single crystals

被引:24
作者
Skuratov, VA
Zagorski, DL
Efimov, AE
Kluev, VA
Toporov, YP
Mchedlishvili, BV
机构
[1] RAS, Shubnikov Inst Crystallog, Moscow 117901, Russia
[2] Joint Inst Nucl Res Dubna, Flerov Lab Nucl React, Dubna, Russia
[3] RAS, Inst Phys Chem, Moscow 117901, Russia
基金
俄罗斯基础研究基金会;
关键词
heavy ions; sapphire; tracks; AFM; exoelectronic emission;
D O I
10.1016/S1350-4487(01)00230-X
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
Surface changes in sapphire single crystals with four different orientations produced by irradiation with Kr (305 MeV), Xe (595 MeV) and Bi (710, 557, 269 and 151 MeV) ions have been studied by means of atomic force microscopy and thermo-stimulated exo-electron emission (TS EEE). It was observed that individual surface defects with density corresponding to the ion fluence have been detected only for Bi ions with energy higher than 269 MeV. At the highest surface ionizing density values of 41 and 35 keV/nm, these defects were found to have a complicated structure-the hillock surrounded by border ring or hillock with cavity on the top. The TS EEE measurements show that all studied crystals are characterized by TS EEE curve depending on crystallographic orientation and irradiation dose. At the same time, some general features in the TS EEE data for all crystallographic orientations are observed. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:571 / 576
页数:6
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