Formation of aluminum-oxygen complexes in highly aluminum-doped silicon

被引：25

作者：

Bock, Robert ^{[1
]}

Altermatt, Pietro P. ^{[1
]}

Schmidt, Jan ^{[1
]}

Brendel, Rolf ^{[1
]}

机构：

[1] Inst Solar Energy Res Hamelin ISFH, D-31860 Emmerthal, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2010年 / 25卷 / 10期

关键词：

D O I：

10.1088/0268-1242/25/10/105007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show that the carrier lifetime in highly aluminum-doped silicon regions experiences a pronounced degradation during thermal treatment at temperatures above 850 degrees C. The defect formation is shown to be directly linked to the simultaneous presence of oxygen and aluminum and thus can be attributed to the formation of aluminum-oxygen complexes. Temperature-dependent measurements of the defect generation rate provide evidence that the formation of the Al-O complex is thermally activated with an activation energy of 0.25 +/- 0.08 eV.

引用

页数：4

共 13 条

[1] Numerical modeling of highly doped Si:P emitters based on Fermi-Dirac statistics and self-consistent material parameters [J].

Altermatt, PP ;

Schumacher, JO ;

Cuevas, A ;

Kerr, MJ ;

Glunz, SW ;

King, RR ;

Heiser, G ;

Schenk, A .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (06) :3187-3197

[2]

[Anonymous], 2009, P 24 EUR PHOT SOL EN

[3] Electron microscopy analysis of crystalline silicon islands formed on screen-printed aluminum-doped p-type silicon surfaces [J].

Bock, Robert ;

Schmidt, Jan ;

Brendel, Rolf ;

Schuhmann, Henning ;

Seibt, Michael .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (04)

[4] Misfit dislocations generated during non-ideal boron and phosphorus diffusion and their effect on high-efficiency silicon solar cells [J].

Cousins, PJ ;

Cotter, JE .

Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005, 2005, :1047-1050

[5] IMPURITIES IN SILICON SOLAR-CELLS [J].

DAVIS, JR ;

ROHATGI, A ;

HOPKINS, RH ;

BLAIS, PD ;

RAICHOUDHURY, P ;

MCCORMICK, JR ;

MOLLENKOPF, HC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :677-687

[6]

Kane D.E., 1985, PROC 18 IEEE PHOTOVO, P578

[7] First-principles study of migration, restructuring, and dissociation energies of oxygen complexes in silicon [J].

Lee, YJ ;

von Boehm, J ;

Pesola, M ;

Nieminen, RA .

PHYSICAL REVIEW B, 2002, 65 (08) :1-12

[8] Determining the defect parameters of the deep aluminum-related defect center in silicon [J].

Rosenits, Philipp ;

Roth, Thomas ;

Glunz, Stefan W. ;

Beljakowa, Svetlana .

APPLIED PHYSICS LETTERS, 2007, 91 (12)

[9] Temperature- and injection-dependent lifetime spectroscopy for the characterization of defect centers in semiconductors [J].

Schmidt, J .

APPLIED PHYSICS LETTERS, 2003, 82 (13) :2178-2180

[10]

Schmidt J., 2007, N TYPE EUROPEAN PHOT, P998

← 1 2 →