Photovoltaic and charge transfer processes in ITO/AY/DAPDAB/in P-N junction devices

被引：0
|
作者：
Sharma, GD [1 ]
Sangodkar, SG [1 ]
Roy, MS [1 ]
机构：
[1] JNV Univ, Dept Phys, Jodhpur 342005, Rajasthan, India
来源：
PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Most of the organic photovoltaic devices investigated so far have been Schottky type diode. The power conversion efficiency of these devices has been limited by low quantum efficiency and a low fill factor. A high power conversion efficiency of about 0.1 to 0.2 % can be achieved with the two layer organic photovoltaic cells. In this paper we are reporting the electrical and photoelectrical properties of p-n junction device based on allyl violgen (AV) and diazo phenyl diamino benzidine (DAPDAB).
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页码：446 / 449
页数：4
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