Influence of electric field on photoluminescence quenching in GaAs/AlGaAs quantum wells

被引：0
作者：
Asmontas, S
Cesna, A
Gradauskas, J
Köhler, K
Kundrotaite, A
Kundrotas, J
Suziedelis, A
Valusis, G
机构：
[1] Lithuania Acad Sci, Inst Semicond Phys, LT-2600 Vilnius, Lithuania
[2] Fraunhofer Inst Angew Festkorperphys, DE-79108 Freiburg, Germany
[3] Gediminas Tech Univ Vilnius, LT-2054 Vilnius, Lithuania
来源：
ULTRAFAST PHENOMENA IN SEMICONDUCTORS | 1999年 / 297-2卷
关键词：
GaAs/AlGaAs quantum wells; excitons; photoluminescence quenching; impact ionization;
D O I：
10.4028/www.scientific.net/MSF.297-298.253
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present experimental study of the influence of an electric field applied in-parallel to the layers of GaAs/Al0.35Ga0.65As quantum wells on the photoluminescence at liquid nitrogen temperature. It is determined that the photoluminescence is quenched due to impact ionization of excitons. Main regularities of given processes are studied for different quantum wells at different illumination intensities.
引用
收藏
页码：253 / 256
页数：4
相关论文
共 13 条
[1]   Photoluminescence transients due to donor and exciton avalanche breakdown [J].
Cesna, A ;
Kundrotas, J ;
Dargys, A .
JOURNAL OF LUMINESCENCE, 1998, 78 (02) :157-166
[2]   WELL-WIDTH AND ALUMINUM-CONCENTRATION DEPENDENCE OF THE EXCITON BINDING-ENERGIES IN GAAS/ALXGA1-XAS QUANTUM-WELLS [J].
GURIOLI, M ;
MARTINEZPASTOR, J ;
COLOCCI, M ;
BOSACCHI, A ;
FRANCHI, S ;
ANDREANI, LC .
PHYSICAL REVIEW B, 1993, 47 (23) :15755-15762
[3]   TEMPERATURE-DEPENDENCE OF THE RADIATIVE AND NONRADIATIVE RECOMBINATION TIME IN GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES [J].
GURIOLI, M ;
VINATTIERI, A ;
COLOCCI, M ;
DEPARIS, C ;
MASSIES, J ;
NEU, G ;
BOSACCHI, A ;
FRANCHI, S .
PHYSICAL REVIEW B, 1991, 44 (07) :3115-3124
[4]   PHOTOLUMINESCENCE OF TWO-DIMENSIONAL EXCITONS IN AN ELECTRIC-FIELD - LIFETIME ENHANCEMENT AND FIELD-IONIZATION IN GAAS QUANTUM WELLS [J].
KOHLER, K ;
POLLAND, HJ ;
SCHULTHEIS, L ;
TU, CW .
PHYSICAL REVIEW B, 1988, 38 (08) :5496-5503
[5]   Picosecond time evolution of free electron-hole pairs into excitons in GaAs quantum wells [J].
Kumar, R ;
Vengurlekar, AS ;
Prabhu, SS ;
Shah, J ;
Pfeiffer, LN .
PHYSICAL REVIEW B, 1996, 54 (07) :4891-4897
[6]  
Kundrotas J., 1992, Lithuanian Physics Journal, V32, P419
[7]   TEMPERATURE-DEPENDENCE OF EXCITON LIFETIMES IN GAAS/ALXGA1-XAS SINGLE QUANTUM-WELLS [J].
MARTINEZPASTOR, J ;
VINATTIERI, A ;
CARRARESI, L ;
COLOCCI, M ;
ROUSSIGNOL, P ;
WEIMANN, G .
PHYSICAL REVIEW B, 1993, 47 (16) :10456-10460
[8]   TEMPERATURE-DEPENDENCE OF THE GAMMA-8V-GAMMA-6C GAP OF GAAS [J].
OELGART, G ;
ORSCHEL, B ;
PROCTOR, M ;
MARTIN, D ;
MORIERGENOUD, F ;
REINHART, FK .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) :2742-2747
[9]   EXPERIMENTAL AND THEORETICAL-STUDY OF EXCITONIC-TRANSITION ENERGIES IN GAAS/ALXGA1-XAS QUANTUM-WELLS [J].
OELGART, G ;
PROCTOR, M ;
MARTIN, D ;
MORIERGENAUD, F ;
REINHART, FK ;
ORSCHEL, B ;
ANDREANI, LC ;
RHAN, H .
PHYSICAL REVIEW B, 1994, 49 (15) :10456-10465
[10]   Coupled electron and nonequilibrium optical phonon transport in a GaAs quantum well [J].
Paulavicius, G ;
Mitin, VV ;
Bannov, NA .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (11) :5580-5588
12