Single photon emission from InGaN/GaN quantum dots up to 50 K

被引：38

作者：

Kremling, Stefan ^{[1
]}

Tessarek, Christian ^{[2
]}

Dartsch, Heiko ^{[2
]}

Figge, Stephan ^{[2
]}

Hoefling, Sven ^{[1
]}

Worschech, Lukas ^{[1
]}

Kruse, Carsten ^{[2
]}

Hommel, Detlef ^{[2
]}

Forchel, Alfred ^{[1
]}

机构：

[1] Univ Wurzburg, Wilhelm Conrad Rontgen Res Ctr Complex Mat Syst, Inst Phys, D-97074 Wurzburg, Germany

[2] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 06期

关键词：

HIGH-TEMPERATURE;

D O I：

10.1063/1.3683521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the optical properties of single InGaN quantum dots (QDs) by means of microphotoluminescence (mu PL) spectroscopy. The QDs were grown on sapphire substrate using metal organic vapor phase epitaxy. Sharp and isolated single exciton emission lines in the blue spectral range were observed. The QD luminescence shows a strong degree of linear polarization up to 96% perpendicular to the growth axis (c-axis) with no preferential alignment in the xy plane. Second order autocorrelation measurements were performed under pulsed excitation and single photon emission up to 50 K is demonstrated. (C) 2012 American Institute of Physics. [doi:10.1063/1.3683521]

引用

页数：3

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