Optical characterisation of silicon nanocrystals embedded in SiO2/Si3N4 hybrid matrix for third generation photovoltaics

被引：17
作者：
Di, Dawei [1 ]
Xu, Heli [1 ]
Perez-Wurfl, Ivan [1 ]
Green, Martin A. [1 ]
Conibeer, Gavin [1 ]
机构：
[1] Univ New S Wales, ARC Photovolta Ctr Excellence, Sydney, NSW 2052, Australia
来源：
NANOSCALE RESEARCH LETTERS | 2011年 / 6卷
基金：
澳大利亚研究理事会;
关键词：
silicon nanocrystals; third generation photovoltaics; absorption coefficient; photoluminescence; band gap extraction; FILMS; CELLS; SIZE;
D O I：
10.1186/1556-276X-6-612
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Silicon nanocrystals with an average size of approximately 4 nm dispersed in SiO2/Si3N4 hybrid matrix have been synthesised by magnetron sputtering followed by a high-temperature anneal. To gain understanding of the photon absorption and emission mechanisms of this material, several samples are characterised optically via spectroscopy and photoluminescence measurements. The values of optical band gap are extracted from interference-minimised absorption and luminescence spectra. Measurement results suggest that these nanocrystals exhibit transitions of both direct and indirect types. Possible mechanisms of absorption and emission as well as an estimation of exciton binding energy are also discussed.
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页码：1 / 6
页数：6
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