Nanopipes and inversion domains in high quality GaN epitaxial layers

被引：0

作者：

Ponce, FA

Cherns, D

Young, WT

Steeds, JW

Nakamura, S

机构：

来源：

III-V NITRIDES | 1997年 / 449卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we report that, in addition to dislocations, two other types of defects are observed in high quality GaN thin films. These defects have a filamentary nature, are oriented along the < 0001 > direction. and may not be easily distinguished from the pure dislocations. Using a combination of conventional electron microscopy with convergent beam electron diffraction techniques we show that one of these types of dislocations consist of nanopipes, which are coreless dislocations with Burgers vectors < 0001 >. The other type of observed defects consist of inversion domains with [<000(1)over bar>] orientation within the [0001] matrix. The origin of the inversion domains and nanopipes is discussed.

引用

页码：405 / 410

页数：6

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