EBIC study of field effect transistors on modulation-doped AlGaAs/InGaAs/GaAs heterostructures

The EBIC signal from Field Effect Transistors on a AlGaAs/InGaAs/GaAs modulation-doped heterostructure has been measured at 87 K. The experiments were made in the gate-source configuration. It is found that the EBIC signal can be limited by the quantum well channel current of majority carriers. The analysis of the EBIC current as a function of beam voltage and applied bias, combined with that of the cathodoluminescence intensity, allows to conclude that the recombination at the InGaAs quantum well is dominated by interface recombination.