EBIC study of field effect transistors on modulation-doped AlGaAs/InGaAs/GaAs heterostructures

被引：0

作者：

Sieber, B ^{[1
]}

Farvacque, JL ^{[1
]}

机构：

[1] Univ Sci & Technol Lille, URA 234, Lab Struct & Proprietes Etat Solide, FR-59655 Villeneuve Dascq, France

来源：

SOLID STATE PHENOMENA | 1998年 / 63-4卷

关键词：

D O I：

10.4028/www.scientific.net/SSP.63-64.13

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The EBIC signal from Field Effect Transistors on a AlGaAs/InGaAs/GaAs modulation-doped heterostructure has been measured at 87 K. The experiments were made in the gate-source configuration. It is found that the EBIC signal can be limited by the quantum well channel current of majority carriers. The analysis of the EBIC current as a function of beam voltage and applied bias, combined with that of the cathodoluminescence intensity, allows to conclude that the recombination at the InGaAs quantum well is dominated by interface recombination.

引用

页码：13 / 24

页数：12

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