EBIC study of field effect transistors on modulation-doped AlGaAs/InGaAs/GaAs heterostructures

被引：0
|
作者：
Sieber, B [1 ]
Farvacque, JL [1 ]
机构：
[1] Univ Sci & Technol Lille, URA 234, Lab Struct & Proprietes Etat Solide, FR-59655 Villeneuve Dascq, France
来源：
SOLID STATE PHENOMENA | 1998年 / 63-4卷
关键词：
D O I：
10.4028/www.scientific.net/SSP.63-64.13
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The EBIC signal from Field Effect Transistors on a AlGaAs/InGaAs/GaAs modulation-doped heterostructure has been measured at 87 K. The experiments were made in the gate-source configuration. It is found that the EBIC signal can be limited by the quantum well channel current of majority carriers. The analysis of the EBIC current as a function of beam voltage and applied bias, combined with that of the cathodoluminescence intensity, allows to conclude that the recombination at the InGaAs quantum well is dominated by interface recombination.
引用
收藏
页码：13 / 24
页数：12
相关论文
共 50 条
  • [1] EBIC study of field effect transistors on modulation-doped AlGaAs/InGaAs/GaAs heterostructures
    Universite des Sciences et, Technologies de Lille, Villeneuve d'Ascq, France
    Diffusion and Defect Data Pt.B: Solid State Phenomena, 1998, 63-64 : 13 - 24
  • [2] Effect of hydrogen on modulation-doped AlGaAs/InGaAs/GaAs heterostructures: a photoluminescence study
    Naik, KG
    Rao, KSRK
    Srinivasan, T
    Muralidharan, R
    Mehta, SK
    SOLID STATE COMMUNICATIONS, 2004, 132 (12) : 805 - 808
  • [3] PHOTOLUMINESCENCE CHARACTERIZATION OF GATED PSEUDOMORPHIC ALGAAS/INGAAS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS
    GILPEREZ, JM
    SANCHEZROJAS, JL
    MUNOZ, E
    CALLEJA, E
    DAVID, JPR
    HILL, G
    CASTAGNE, J
    APPLIED PHYSICS LETTERS, 1992, 61 (10) : 1225 - 1227
  • [4] A novel GaAs/InGaAs/AlGaAs structure of modulation-doped field-effect transistors with high transconductances
    Chang, YC
    Luo, HL
    Wang, Y
    Wang, HS
    Wang, JG
    Du, GT
    CHINESE PHYSICS LETTERS, 2002, 19 (04) : 588 - 590
  • [5] CHARACTERIZATION OF INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS
    KETTERSON, AA
    MASSELINK, WT
    GEDYMIN, JS
    KLEM, J
    PENG, CK
    KOPP, WF
    MORKOC, H
    GLEASON, KR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 564 - 571
  • [6] ELECTROREFLECTANCE OF GAAS-ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS
    HOPFEL, RA
    SHAH, J
    GOSSARD, AC
    WIEGMANN, W
    APPLIED PHYSICS LETTERS, 1985, 47 (02) : 163 - 165
  • [7] HIGH TRANSCONDUCTANCE INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS
    KETTERSON, A
    MOLONEY, M
    MASSELINK, WT
    PENG, CK
    KLEM, J
    FISCHER, R
    KOPP, W
    MORKOC, H
    IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 628 - 630
  • [8] ANOMALOUS PHOTOMAGNETORESISTANCE EFFECT IN MODULATION-DOPED ALGAAS GAAS HETEROSTRUCTURES
    LURYI, S
    KASTALSKY, A
    APPLIED PHYSICS LETTERS, 1984, 45 (02) : 164 - 167
  • [9] Photoinduced band-bending effect of low temperature GaAs on AlGaAs/InGaAs/GaAs modulation-doped transistors
    Folkes, PA
    Gumbs, G
    Xu, W
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) : 632 - 634
  • [10] ELECTRON TRANSPORT IN MODULATION-DOPED InAlAs/InGaAs/InAlAs AND AlGaAs/InGaAs/AlGaAs HETEROSTRUCTURES
    Pozela, J.
    Pozela, K.
    Juciene, V.
    Suziedelis, A.
    Zurauskiene, N.
    Shkolnik, A. S.
    LITHUANIAN JOURNAL OF PHYSICS, 2011, 51 (04): : 270 - 275
12345