Low-Voltage, Printed, All-Polymer Integrated Circuits Employing a Low-Leakage and High-Yield Polymer Dielectric

被引:37
作者
Stucchi, Elena [1 ,2 ]
Dell'Erba, Giorgio [1 ]
Colpani, Paolo [1 ]
Kim, Yun-Hi [3 ,4 ]
Caironi, Mario [1 ]
机构
[1] Ist Italiano Tecnol, Ctr Nano Sci & Technol PoliMi, Via Pascoli 70-3, I-20133 Milan, Italy
[2] Politecn Milan, Dipartimento Fis, Pza Leonardo da Vinci 32, I-20133 Milan, Italy
[3] Gyeongsang Natl Univ, Dept Chem, Jinju 660701, South Korea
[4] Gyeongsang Natl Univ, Res Inst Green Energy Convergence Technol RIGET, Jinju 660701, South Korea
来源
ADVANCED ELECTRONIC MATERIALS | 2018年 / 4卷 / 12期
基金
欧洲研究理事会;
关键词
flexible electronics; inkjet printing; organic field-effect transistors; parylene; printed integrated circuits; FIELD-EFFECT TRANSISTORS; ORGANIC TRANSISTORS; GATE DIELECTRICS; HIGH-PERFORMANCE; LOGIC-CIRCUITS; THIN; OPPORTUNITIES; GRAVURE; PHYSICS; PAPER;
D O I
10.1002/aelm.201800340
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In the path toward the integration of organic field-effect transistors (OFETs) and logic circuits into low-cost and mass produced consumer products, all-organic devices based on printed semiconductors are one of the best options to meet stringent cost requirements. Within this framework, it is still challenging to achieve low voltage operation, as required by the use of thin film batteries and energy harvesters, for which a high capacitance and reliable organic dielectric is required. Here, the development of a parylene-C based dielectric bilayer compatible with top-gate architectures for low-voltage OFETs and logic circuits is presented. The polymer bilayer dielectric allows the high yield fabrication of all-polymer, bendable, transparent p- and n-type OFETs operating below 2 V, with low leakage, uniform performances, and high yield. Such a result is a key enabler for the reliable realization of complementary logic circuits that can operate already at a voltage bias of 2 V, such as well-balanced inverters, ring-oscillators and D-Flip-Flops.
引用
收藏
页数:10
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