The fine structure constant determines spontaneous emission rates from semiconductors

被引:1
作者
Szkopek, Thomas [1 ]
机构
[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada
关键词
Spectral density - Atomic physics - Spontaneous emission;
D O I
10.1063/1.3591171
中图分类号
O59 [应用物理学];
学科分类号
摘要
The probability of spontaneous emission from a semiconductor, per oscillation of the optical field, is proportional to the cube of the fine structure constant alpha and the ratio of the semiconductor dipole parameter E(p) to hydrogen's Rydberg energy. Expressions for radiative recombination rates in quantum wells and bulk semiconductors are given, including the bimolecular radiative recombination coefficient B. We show that alpha sets the natural scale for spectral density of spontaneous emission per square wavelength area of a quantum well. The fine structure constant also sets a physical limit to the Purcell enhancement factor for spontaneous emission. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3591171]
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页数:3
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共 20 条
  • [1] Visibility of graphene flakes on a dielectric substrate
    Abergel, D. S. L.
    Russell, A.
    Fal'ko, Vladimir I.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (06)
  • [2] Optical and magneto-optical far-infrared properties of bilayer graphene
    Abergel, D. S. L.
    Fal'ko, Vladimir I.
    [J]. PHYSICAL REVIEW B, 2007, 75 (15):
  • [3] MEASUREMENT AND CALCULATION OF SPONTANEOUS RECOMBINATION CURRENT AND OPTICAL GAIN IN GAAS-ALGAAS QUANTUM-WELL STRUCTURES
    BLOOD, P
    KUCHARSKA, AI
    JACOBS, JP
    GRIFFITHS, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) : 1144 - 1156
  • [4] QUANTUM LIMITS ON NOISE IN LINEAR-AMPLIFIERS
    CAVES, CM
    [J]. PHYSICAL REVIEW D, 1982, 26 (08): : 1817 - 1839
  • [5] Temperature dependence of carrier lifetimes in InN
    Chen, F
    Cartwright, AN
    Lu, H
    Schaff, WJ
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (05): : 768 - 772
  • [6] Cohen-Tannoudji C., 1998, Atom-Photon Interactions
  • [7] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS
    DUMKE, WP
    [J]. PHYSICAL REVIEW, 1963, 132 (05): : 1998 - &
  • [8] Edwards D.F., 1985, Handbook of optical constants of solids
  • [9] Feynman RP., 1998, QUANTUM ELECTRODYNAM
  • [10] Counting graphene layers on glass via optical reflection microscopy
    Gaskell, P. E.
    Skulason, H. S.
    Rodenchuk, C.
    Szkopek, T.
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (14)