Self-assembly of metallic double-dot single-electron device

被引：14

作者：

Guttman, A. ^{[1
]}

Mahalu, D. ^{[1
]}

Sperling, J. ^{[2
]}

Cohen-Hoshen, E. ^{[1
]}

Bar-Joseph, I. ^{[1
]}

机构：

[1] Weizmann Inst Sci, Dept Condensed Matter Phys, IL-76100 Rehovot, Israel

[2] Weizmann Inst Sci, Dept Organ Chem, IL-76100 Rehovot, Israel

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 06期

基金：

以色列科学基金会;

关键词：

D O I：

10.1063/1.3624899

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an approach that allows forming a nanometric double dot single electron device. It uses chemical synthesis of metallic nanoparticles to form dimeric structures, e-beam lithography to define electrodes and gates, and electrostatic trapping to place the dimers in between the electrodes. We demonstrate a control of its charge configuration and conductance properties over a wide range of external voltages. This approach can be straightforwardly generalized to other material systems and may allow realizing quantum information devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624899]

引用

页数：3

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