Photogalvanic effect induced fully spin polarized current and pure spin current in zigzag SiC nanoribbons

被引:56
作者
Chen, Jun [1 ,3 ]
Zhang, Liwen [2 ,3 ]
Zhang, Lei [2 ,3 ]
Zheng, Xiaohong [2 ,4 ]
Xiao, Liantuan [2 ,3 ]
Jia, Suotang [2 ,3 ]
Wang, Jian [5 ,6 ]
机构
[1] Shanxi Univ, Inst Theoret Phys, Taiyuan 030006, Peoples R China
[2] Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China
[3] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
[4] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
[5] Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China
[6] Univ Hong Kong, Ctr Theoret & Computat Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
SILICON-CARBIDE NANORIBBONS; GRAPHENE NANORIBBONS; MAGNETIC-PROPERTIES; SPINTRONICS; DEVICE; TRANSPORT; MEMORY;
D O I
10.1039/c8cp05046e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using nonequilibrium Green's function combined with density functional theory, we investigate the spin-related current generated by the photogalvanic effect (PGE) in monolayer zigzag SiC nanoribbons (ZSiCNRs) by first-principles calculations. Due to its unique atomic structure and band structure properties, we find that 100% spin polarized photocurrent can be easily obtained in a wide range of photon energies by shining linearly/circularly polarized light when ZSiCNRs are in the anti-ferromagnetic (AFM) state. In comparison, when the ZSiCNRs are in the ferromagnetic (FM) state, the spin polarization of photocurrent can vary from 0% to 100% by changing the photon energy or polarization angle. More interestingly, pure spin current can also be generated by changing the circular polarization angle in the FM state. Thus, by properly tuning the photon energy, one can obtain 100% spin polarized current regardless of its magnetic configuration and pure spin current in its FM state. Our numerical findings pave a feasible way for ZSiCNRs' novel applications in spintronics.
引用
收藏
页码:26744 / 26751
页数:8
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