Design, fabrication and optical characterization of GaAs photonic crystal nanocavity lasers with InAs quantum dots gain wafer-bonded onto Si substrates

被引：0

作者：

Tanabe, Katsuaki ^{[1
]}

Nomura, Masahiro ^{[1
]}

Guimard, Denis ^{[1
,2
]}

Iwamoto, Satoshi ^{[1
,2
]}

Arakawa, Yasuhiko ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 10期

关键词：

Photonic crystal; Nanocavity laser; Quantum dot; Silicon photonics; CONTINUOUS-WAVE OPERATION; SILICON-WAFER; INP;

D O I：

10.1016/j.physe.2010.03.011

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We designed and fabricated III-V compound semiconductor two-dimensional photonic crystal (PhC) thin film slabs with quantum dots (QDs) inside formed on Si substrates for highly integrated silicon photonic circuits with built-in nanolasers. Defect-shifted L3 type PhC nanocavities formed in GaAs thin films embedding 1.3 mu m-emitting InAs QDs layer-transferred onto Si substrates were investigated. Quality factors < 1000 for the PhC nanocavities on SiO(2) were enhanced up to similar to 8000 by removing SiO(2) to form air-bridge structures, resulting in room temperature, continuous wave lasing. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2560 / 2562

页数：3

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