Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots

被引：13

作者：

Saucer, T. W. ^{[1
]}

Lee, J-E. ^{[1
]}

Martin, A. J. ^{[2
]}

Tien, D. ^{[1
]}

Millunchick, J. M. ^{[2
]}

Sih, V. ^{[1
]}

机构：

[1] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

SOLID STATE COMMUNICATIONS | 2011年 / 151卷 / 04期

基金：

美国国家科学基金会;

关键词：

Quantum Dots; Semiconductors; Molecular beam epitaxy; Photoluminescence; LUMINESCENCE;

D O I：

10.1016/j.ssc.2010.12.020

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only on patterned regions, demonstrating preferential nucleation of optically active dots at desired locations and below the critical thickness for dot formation at these growth conditions. Photoluminescence measurements as a function of varying focused ion beam irradiated hole spacing showed that the quantum dot emission intensity increased with decreasing array periodicity, consistent with increasing dot density. (C) 2010 Elsevier Ltd. All rights reserved.

引用

收藏

页码：269 / 271

页数：3

相关论文

共 15 条

[1] Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates [J].

Atkinson, P. ;

Kiravittaya, S. ;

Benyoucef, M. ;

Rastelli, A. ;

Schmidt, O. G. .

APPLIED PHYSICS LETTERS, 2008, 93 (10)

[2] Deterministic coupling of single quantum dots to single nanocavity modes [J].

Badolato, A ;

Hennessy, K ;

Atatüre, M ;

Dreiser, J ;

Hu, E ;

Petroff, PM ;

Imamoglu, A .

SCIENCE, 2005, 308 (5725) :1158-1161

[3] Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots [J].

Brusaferri, L ;

Sanguinetti, S ;

Grilli, E ;

Guzzi, M ;

Bignazzi, A ;

Bogani, F ;

Carraresi, L ;

Colocci, M ;

Bosacchi, A ;

Frigeri, P ;

Franchi, S .

APPLIED PHYSICS LETTERS, 1996, 69 (22) :3354-3356

[4] Influence of growth conditions on the photoluminescence of self-assembled InAs/GaAs quantum dots [J].

Chu, L ;

Arzberger, M ;

Böhm, G ;

Abstreiter, G .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (04) :2355-2362

[5] Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses [J].

Dai, YT ;

Fan, JC ;

Chen, YF ;

Lin, RM ;

Lee, SC ;

Lin, HH .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) :4489-4492

[6] Controlling the spontaneous emission rate of single quantum dots in a two-dimensional photonic crystal [J].

Englund, D ;

Fattal, D ;

Waks, E ;

Solomon, G ;

Zhang, B ;

Nakaoka, T ;

Arakawa, Y ;

Yamamoto, Y ;

Vuckovic, J .

PHYSICAL REVIEW LETTERS, 2005, 95 (01)

[7] ULTRANARROW LUMINESCENCE LINES FROM SINGLE QUANTUM DOTS [J].

GRUNDMANN, M ;

CHRISTEN, J ;

LEDENTSOV, NN ;

BOHRER, J ;

BIMBERG, D ;

RUVIMOV, SS ;

WERNER, P ;

RICHTER, U ;

GOSELE, U ;

HEYDENREICH, J ;

USTINOV, VM ;

EGOROV, AY ;

ZHUKOV, AE ;

KOPEV, PS ;

ALFEROV, ZI .

PHYSICAL REVIEW LETTERS, 1995, 74 (20) :4043-4046

[8] Temperature and excitation density dependence of the photoluminescence from annealed InAs/GaAs quantum dots [J].

Le Ru, EC ;

Fack, J ;

Murray, R .

PHYSICAL REVIEW B, 2003, 67 (24)

[9] Filling of hole arrays with InAs quantum dots [J].

Lee, Jennifer Y. ;

Noordhoek, Mark J. ;

Smereka, Peter ;

McKay, Hugh ;

Millunchick, Joanna M. .

NANOTECHNOLOGY, 2009, 20 (28)

[10] Tuning self-assembled InAs quantum dots by rapid thermal annealing [J].

Malik, S ;

Roberts, C ;

Murray, R ;

Pate, M .

APPLIED PHYSICS LETTERS, 1997, 71 (14) :1987-1989