Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

被引：200

作者：

Goux, L. ^{[1
]}

Czarnecki, P. ^{[1
]}

Chen, Y. Y. ^{[1
]}

Pantisano, L. ^{[1
]}

Wang, X. P. ^{[1
]}

Degraeve, R. ^{[1
]}

Govoreanu, B. ^{[1
]}

Jurczak, M. ^{[1
]}

Wouters, D. J. ^{[1
]}

Altimime, L. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 24期

关键词：

SILICON; THIN;

D O I：

10.1063/1.3527086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we study the influence of the Pt top-electrode thickness and of the chamber atmosphere during cell operation on the resistive switching of TiN\HfO2\Pt cells. The oxygen permeability of the Pt electrode directly in contact with the atmosphere significantly affects the resistive switching and the resistance states of the cell. The results provide strong experimental indications that the electroforming operation leads to oxygen-vacancy formation and that the subsequent reset operation relies on the available oxygen species in the filament neighborhood. Significant implications with respect to endurance and retention assessment of resistive-switching memory devices are discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3527086]

引用

页数：3

共 16 条

[1]

Baek IG, 2005, INT EL DEVICES MEET, P769

[2]

Chen Y. S., 2009, IEDM, P105

[3] On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO2\Pt Memory Systems [J].