Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

被引：47

作者：

Gao, Xian ^{[1
]}

Wei, Zhipeng ^{[1
]}

Zhao, Fenghuan ^{[2
]}

Yang, Yahui ^{[2
]}

Chen, Rui ^{[2
]}

Fang, Xuan ^{[1
]}

Tang, Jilong ^{[1
]}

Fang, Dan ^{[1
]}

Wang, Dengkui ^{[1
]}

Li, Ruixue ^{[1
]}

Ge, Xiaotian ^{[1
]}

Ma, Xiaohui ^{[1
]}

Wang, Xiaohua ^{[1
]}

机构：

[1] Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, Sch Sci, 7089 Wei Xing Rd, Changchun 130022, Peoples R China

[2] Southern Univ Sci & Technol China, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China

来源：

SCIENTIFIC REPORTS | 2016年 / 6卷

基金：

中国国家自然科学基金;

关键词：

TEMPERATURE-DEPENDENCE; OPTICAL-PROPERTIES; EXCITON LOCALIZATION; PHOTOLUMINESCENCE; GAP; TRANSITION; EMISSION; ENERGY; ALLOY;

D O I：

10.1038/srep29112

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration.

引用

页数：7

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