Soft photocurable nanoimprint lithography for compound semiconductor nanostructures

被引:13
作者
Meneou, K. [1 ]
Cheng, K. Y. [1 ]
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2008年 / 26卷 / 01期
关键词
Atomic force microscopy - Dry etching - Nanostructures - Optoelectronic devices - Scanning electron microscopy - Semiconducting gallium arsenide - Wet etching;
D O I
10.1116/1.2823035
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Soft photocurable nanoimprint lithography is used to transfer nanoscale features to GaAs substrates. Only ambient conditions without externally applied imprinting pressure are required during the imprinting step. The pattern which is transferred consists of a dense array of 100 nm features, either one-dimensional lines or two-dimensional holes. Both wet etching and dry etching are used to etch the GaAs for pattern transfer. Examination by atomic force microscopy and scanning electron microscopy confirms faithful pattern transfer; defects are few enough and patterned areas are large enough for optoelectronic device applications. (c) 2008 American Vacuum Society.
引用
收藏
页码:156 / 158
页数:3
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