Effect of crystal and crucible rotations on the interface shape of Czochralski grown silicon single crystals

被引：50

作者：

Noghabi, Omidreza Asadi ^{[1
]}

M'Hamdi, Mohammed ^{[1
,2
]}

Jomaa, Moez ^{[2
]}

机构：

[1] Norwegian Univ Sci & Technol, N-7034 Trondheim, Norway

[2] SINTEF Mat & Chem, N-0314 Oslo, Norway

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 318卷 / 01期

关键词：

Numerical simulation; Crystal rotation; Crucible rotation; Melt/crystal interface shape; Czochralski process; TRANSVERSE MAGNETIC-FIELD; NUMERICAL-SIMULATION; CZ GROWTH; SI; DEFECTS; FURNACE; MODEL;

D O I：

10.1016/j.jcrysgro.2010.11.113

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A set of global heat transfer simulations in Czochralski (Cz) furnace for producing silicon single crystals have been performed to investigate the effect of crystal and crucible rotations on melt convection and crystal/melt interface shape. The 2D axisymmetric simulations are carried out taking into account radiative and conductive heat transfers between furnace components, melt convection including thermocapillary forces (Marangoni) and gas flow. Melt flow pattern and temperature distribution have been studied for several combinations of crystal and crucible rotations and for different crystal heights. The result shows that crystal/melt interface shape and melt flow regime are strongly sensitive to the rate of rotations of both crystal and crucible. Interfaces with low deflection can be achieved for certain combinations of crystal and crucible rotation rates. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：173 / 177

页数：5

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