Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxy

被引：91

作者：

Ishikawa, T ^{[1
]}

Kohmoto, S ^{[1
]}

Asakawa, K ^{[1
]}

机构：

[1] Femtosecond Technol Res Assoc, Tsukuba, Ibaraki 30026, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 12期

关键词：

D O I：

10.1063/1.122254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied a site-control method for self-organized InAs quantum dots on GaAs substrates by a combination of in situ electron-beam (FB) lithography and molecular-beam epitaxy (MBE) using an ultrahigh-vacuum multichamber system. Small and shallow holes were patterned on a MBE-grown GaAs (001) surface by in situ EB writing and Cl-2-gas etching. When more than a 1.4 monolayer of InAs was applied to the patterned surface, In(Ga)As dots were preferentially self-organized in the holes while dot formation around the holes was sufficiently suppressed. When we further increased the amount of InAs, the dots enlarged remarkably, presumably due to a stress-relaxation effect. (C) 1998 American Institute of Physics.

引用

页码：1712 / 1714

页数：3

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