Low-Power Transparent RFID Circuits Using Enhancement/Depletion Logic Gates Based on Deuterium-Treated ZnO TFTs

被引：20

作者：

Xu, Hua ^{[1
]}

Ye, Zhi ^{[1
]}

Liu, Ni ^{[1
]}

Wang, Ying ^{[1
]}

Zhang, Ning ^{[1
]}

Liu, Yang ^{[1
]}

机构：

[1] Zhejiang Univ, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 10期

基金：

美国国家科学基金会;

关键词：

Zinc oxide; thin-film-transistor; deuterium; ratioed logic gate; RFID; THIN-FILM TRANSISTORS; ZINC-OXIDE; TECHNOLOGY; INVERTERS;

D O I：

10.1109/LED.2017.2737583

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transparent radio frequency identification (RFID) integrated circuits based on ZnO thin film transistors were developed by using ratioed logic gates with depletion loads. The fabrication of these logic gates employed a simple deuterium plasma treatment to adjust the threshold voltages of the load transistors. Inverters were realized with full swing (0.02 similar to 4.99V), high gain of -48V/V, large noise margin, and small area. RFID circuits based on such logic gates exhibited ultra-low power dissipation of 8.28 mu W at a supply voltage of 2.4 V and a considerably high data rate of 1.6 kb/s, which may open up possibilities for applications including transparent, low-cost RFID tags.

引用

页码：1383 / 1386

页数：4

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