Interfacial charges in organic hetero-layer light emitting diodes probed by capacitance-voltage measurements

被引：30

作者：

Berleb, S ^{[1
]}

Brütting, W ^{[1
]}

Paasch, G ^{[1
]}

机构：

[1] Univ Bayreuth, D-95440 Bayreuth, Germany

来源：

SYNTHETIC METALS | 2001年 / 122卷 / 01期

关键词：

impedance spectroscopy; organic light emitting devices; interfaces;

D O I：

10.1016/S0379-6779(00)01356-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The bias dependent capacitance of organic hetero-layer light emitting diodes (LEDs) based on N,N'-diphenyl-N,N'-bis(1-naphtyl)-1,1-biphenyl-4,4 diamine (NPB) and tris(8-hydroxyquinoline) aluminium (Alq(3)) shows below the built-in voltage, a step-like change from a value corresponding to the total organic layer thickness to a higher value given by the Alq(3) layer thickness. The bias and frequency dependent behaviour of the capacitance can be explained by the presence of negative charges with a density of -6 x 10(11) e/cm(2) at the NPB-Alq(3) interface. This leads to an inhomogeneous potential distribution inside the device with a discontinuity of the electric field at the organic-organic interface. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：37 / 39

页数：3

共 5 条

[1] Interfacial charges and electric field distribution in organic hetero-layer light-emitting devices [J].