Application of the homotopy analysis method to the Poisson-Boltzmann equation for semiconductor devices

This paper describes the application of a recently developed analytic approach known as the homotopy analysis method to derive an approximate solution to the nonlinear Poisson-Boltzmann equation for semiconductor devices. Specifically, this paper presents an analytic solution to potential distribution in a DG-MOSFET (Double Gate-Metal Oxide Semiconductor Field Effect Transistor). The DG-MOSFET represents one of the most advanced device structures in semiconductor technology and is a primary focus of modeling efforts in the semiconductor industry. (C) 2010 Elsevier B.V. All rights reserved.