Negative infrared photocurrent response in layered WS2/reduced graphene oxide hybrids

被引:52
作者
Ratha, Satyajit [1 ]
Simbeck, Adam J. [2 ]
Late, Dattatray J. [3 ]
Nayak, Saroj K. [1 ,2 ]
Rout, Chandra Sekhar [1 ]
机构
[1] Indian Inst Technol, Sch Basic Sci, Bhubaneswar 751013, Orissa, India
[2] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
[3] Natl Chem Lab, CSIR, Phys & Mat Chem Div, Pune 411008, Maharashtra, India
关键词
TRANSITION-METAL DICHALCOGENIDES; CHARGE-TRANSFER; QUANTUM DOTS; SOLAR-CELLS; BAND-GAP; MOS2; WS2; PHOTODETECTORS; TRANSISTORS; HETEROSTRUCTURES;
D O I
10.1063/1.4903780
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report high performance IR photocurrent response of two-dimensional hybrid materials consisting of layered WS2 nanosheets and reduced graphene oxide (RGO). Comparative photocurrent response studies of WS2 nanosheets, RGO, and WS2/RGO hybrids were carried out by performing current-voltage (I-V) and time-dependent current measurements with a laser excitation source having a wavelength of 808 nm. The experimental investigations indicate that WS2/RGO hybrids show negative photocurrent response, whereas WS2 and RGO show positive photocurrent response. The negative photocurrent response of the WS2/RGO hybrids is explained using a band alignment diagram and attributed to a charge transfer mechanism between WS2 and RGO. This analysis is further corroborated by first-principles density functional calculations. The fabricated device based on WS2/RGO hybrids shows a photosensitivity R-lambda of about 6 AW(-1) and a quantum efficiency eta of similar to 924%, which demonstrates high sensitivity of the hybrid material towards IR detection. WS2/RGO hybrids are therefore promising candidates for potential applications in optoelectronic circuits and low cost, high performance, and reliable photodetectors. (C) 2014 AIP Publishing LLC.
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页数:5
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