Visible luminescent Si nanocrystals: optical characterization and application

被引:0
作者
Svechnikov, SV [1 ]
Kaganovich, EB [1 ]
机构
[1] Ukrainian Acad Sci, Inst Semicond Phys, UA-252028 Kiev, Ukraine
来源
INTERNATIONAL CONFERENCE ON OPTICAL DIAGNOSIS OF MATERIALS AND DEVICES FOR OPTO-, MICRO-, AND QUANTUM ELECTRONICS 1997 | 1998年 / 3359卷
关键词
luminescence; quantum confinement; silicon nanocrystals; optical constants; laser processing techniques; optoelectronics; vacuum microelectronics;
D O I
10.1117/12.306209
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Following the recent study on optical characterization and applications of porous silicon, this report provides a review of our research and development of visible luminescent Si nanocrystals with goal to extend functions of Si based materials. We present laser methods for obtaining porous silicon layers and silicon nanocrystalline composite films. Time resolve photoluminescence and optical properties are discussed. The report provides the results of films microstructure control by optical method. We present several examples of multilayers structures applications: lateral coordinate sensitive photovoltaic devices, new irreversible storage media for pulse recording, diffraction gratings, and cold cathode electron emitters.
引用
收藏
页码:172 / 181
页数:10
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