Effect of Magnetic (Nd) Doping on Electrical and Magnetic Properties of Topological Sb2Te3 Single Crystal

被引：5

作者：

Kumar, Kapil ^{[1
,2
]}

Kumar, Yogesh ^{[1
,2
]}

Singh, M. ^{[3
]}

Patnaik, S. ^{[3
]}

Felner, I. ^{[4
]}

Awana, V. P. S. ^{[1
,2
]}

机构：

[1] CSIR Natl Phys Lab, Dr KS Krishnan Marg, New Delhi 110012, India

[2] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India

[3] Jawaharlal Nehru Univ, Sch Phys Sci, New Delhi 110067, India

[4] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel

来源：

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2021年 / 34卷 / 10期

关键词：

Topological insulator; Magnetic doping; Magnetization; Magneto-resistance; Hikami-Larkin-Nagaoka model; SURFACE;

D O I：

10.1007/s10948-021-05983-y

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Here, we report the growth and characterization of single crystals of NdxSb2-xTe3 (x = 0 and 0.1), by solid-state reaction route via self-flux method. The phase and layered growth are confirmed through X-ray diffraction and scanning electron microscopy respectively. A slight contraction in lattice parameters is seen after Nd doping. Also a minute shift in vibrational modes of recorded Raman spectra has been observed by doping of Nd in Sb2Te3. The magneto-resistance values under magnetic field of 5 Tesla for Sb2Te3 are 75% at 2.5 K and 60% at 20 K, but only 40% at 5 K for Nd0.1Sb1.9Te3. DC magnetic measurements exhibit expected diamagnetic and paramagnetic behaviors for pure and Nd doped crystals respectively. A cusp-like behavior is observed in magneto-conductivity of both pure and Nd doped crystals at low magnetic fields (< 1 Tesla) which is analyzed using Hikami-Larkin-Nagaoka (HLN) model. For Sb2Te3, the fitted parameters alpha are -1.02 and -0.58 and the phase coherence lengths L-phi are 50.8(6)nm and 34.9(8)nm at temperatures 2.5 and 20 K respectively. For Nd0.1Sb1.9Te3, alpha is -0.29 and L-phi is 27.2(1)nm at 5 K. The alpha values clearly show the presence of weak anti-localization effect in both pure and Nd doped samples. Also with Nd doping, the contribution of bulk states increases in addition to conducting surface states in overall conduction mechanism.

引用

页码：2463 / 2469

页数：7

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