Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing

被引：12

作者：

Casiraghi, A. ^{[1
]}

Rushforth, A. W. ^{[1
]}

Wang, M. ^{[1
]}

Farley, N. R. S. ^{[1
]}

Wadley, P. ^{[1
]}

Hall, J. L. ^{[1
]}

Staddon, C. R. ^{[1
]}

Edmonds, K. W. ^{[1
]}

Campion, R. P. ^{[1
]}

Foxon, C. T. ^{[1
]}

Gallagher, B. L. ^{[1
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 12期

基金：

英国工程与自然科学研究理事会;

关键词：

annealing; carrier density; ferromagnetic materials; gallium arsenide; gallium compounds; III-V semiconductors; magnetic epitaxial layers; magnetic semiconductors; manganese compounds; molecular beam epitaxial growth; perpendicular magnetic anisotropy; semiconductor epitaxial layers; semiconductor growth;

D O I：

10.1063/1.3491841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effects of postgrowth low temperature annealing on the magnetic, electrical, and structural properties of (Ga(0.94)Mn(0.06))(As(0.9)P(0.1)) layers grown by molecular beam epitaxy. By controlling the annealing time, we are able to tune the magnetic anisotropy between an easy axis in the plane for the as-grown samples, to an easy axis perpendicular to the plane for fully annealed samples. The increase in the carrier density, as a result of annealing, is found to be the primary reason for the sign reversal of the magnetic anisotropy, in qualitative agreement with theoretical predictions. (C) 2010 American Institute of Physics. [doi:10.1063/1.3491841]

引用

页数：3

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