Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

被引：211

作者：

Hader, J. ^{[1
,2
]}

Moloney, J. V. ^{[1
,2
]}

Koch, S. W. ^{[3
,4
]}

机构：

[1] Nonlinear Control Strategies Inc, Tucson, AZ 85705 USA

[2] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA

[3] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[4] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 22期

关键词：

gallium compounds; III-V semiconductors; semiconductor lasers; LIGHT-EMITTING-DIODES;

D O I：

10.1063/1.3446889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3446889]

引用

页数：3

共 13 条

[1] Auger recombination rates in nitrides from first principles [J].

Delaney, Kris T. ;

Rinke, Patrick ;

Van de Walle, Chris G. .

APPLIED PHYSICS LETTERS, 2009, 94 (19)

[2] Three-dimensional atom probe studies of an InxGa1-xN/GaN multiple quantum well structure:: Assessment of possible indium clustering [J].

Galtrey, Mark J. ;

Oliver, Rachel A. ;

Kappers, Menno J. ;

Humphreys, Colin J. ;

Stokes, Debbie J. ;

Clifton, Peter H. ;

Cerezo, Alfred .

APPLIED PHYSICS LETTERS, 2007, 90 (06)

[3] Inhomogeneity of a highly efficient InGaN based blue LED studied by three-dimensional atom probe tomography [J].

Gu, G. H. ;

Park, C. G. ;

Nam, K. B. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3 (04) :100-102

[4] Supression of carrier recombination in semiconductor lasers by phase-space filling [J].

Hader, J ;

Moloney, JV ;

Koch, SW .

APPLIED PHYSICS LETTERS, 2005, 87 (20) :1-3

[5] On the importance of radiative and Auger losses in GaN-based quantum wells [J].

Hader, J. ;

Moloney, J. V. ;

Pasenow, B. ;

Koch, S. W. ;

Sabathil, M. ;

Linder, N. ;

Lutgen, S. .

APPLIED PHYSICS LETTERS, 2008, 92 (26)

[6] Origin of efficiency droop in GaN-based light-emitting diodes [J].

Kim, Min-Ho ;

Schubert, Martin F. ;

Dai, Qi ;

Kim, Jong Kyu ;

Schubert, E. Fred ;

Piprek, Joachim ;

Park, Yongjo .

APPLIED PHYSICS LETTERS, 2007, 91 (18)

[7] High-Power and High-Efficiency InGaN-Based Light Emitters [J].

Laubsch, Ansgar ;

Sabathil, Matthias ;

Baur, Johannes ;

Peter, Matthias ;

Hahn, Berthold .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (01) :79-87

[8] Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes [J].

Mukai, T ;

Yamada, M ;

Nakamura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (7A) :3976-3981

[9] Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaN/GaN [J].

Okamoto, K ;

Scherer, A ;

Kawakami, Y .

APPLIED PHYSICS LETTERS, 2005, 87 (16) :1-3

[10] Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm [J].

Pope, IA ;

Smowton, PM ;

Blood, P ;

Thomson, JD ;

Kappers, MJ ;

Humphreys, CJ .

APPLIED PHYSICS LETTERS, 2003, 82 (17) :2755-2757

← 1 2 →