Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

被引：210
作者：
Hader, J. [1 ,2 ]
Moloney, J. V. [1 ,2 ]
Koch, S. W. [3 ,4 ]
机构：
[1] Nonlinear Control Strategies Inc, Tucson, AZ 85705 USA
[2] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA
[3] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[4] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 22期
关键词：
gallium compounds; III-V semiconductors; semiconductor lasers; LIGHT-EMITTING-DIODES;
D O I：
10.1063/1.3446889
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3446889]
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页数：3
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