Junction Termination Extension Implementing Drive-in Diffusion of Boron for High-Voltage SiC Devices

被引：28

作者：

Bolotnikov, Alexander V.

Muzykov, Peter G. ^{[1
]}

Zhang, Qingchun ^{[2
]}

Agarwal, A. K. ^{[2
]}

Sudarshan, T. S. ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[2] Cree Inc, Durham, NC 27703 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 08期

关键词：

Boron; diffusion; edge termination; junction termination extension (JTE); silicon carbide (SiC); EDGE TERMINATION; IONIZATION RATES; DESIGN; SILICON; ALUMINUM;

D O I：

10.1109/TED.2010.2051246

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel method of graded junction termination extension (JTE) formation for high-voltage 4H-SiC power devices is presented. Unlike conventional multiimplantation or tapered thickness mask approaches utilizing several photolithography steps, the new termination technique utilizes a single mask with window areas varied laterally away from the main junction, a single-step boron implantation, and drive-in diffusion at elevated temperature. Numerical device simulations have been performed for the initial JTE structure and mask optimization. 4H-SiC p-i-n rectifiers with an active area of 1 mm x 1 mm were fabricated and characterized. The fabricated devices exhibited 2.5-kV blocking voltage, which is close to the theoretical value of an ideal parallel-plane p-n junction.

引用

页码：1930 / 1935

页数：6

共 29 条

[1] BALIGA BJ, 1995, POWER SILICON DEVICE, P81
[2] Two-branch Boron Diffusion from Gas Phase in n-type 4H-SiC
Bolotnikov, A. V.
Muzykov, P. G.
Agarwal, A. K.
Zhang, Q.
Sudarshan, T. S.
[J]. SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 453 - 456
[3] Investigation of two-branch boron diffusion from vapor phase in n-type 4H-SiC
Bolotnikov, A. V.
Muzykov, P. G.
Sudarshan, T. S.
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (05)
[4] Improvement of 4H-SiC power p-i-n diode switching performance through local lifetime control using boron diffusion
Bolotnikov, Alexander V.
Muzykov, Peter G.
Grekov, Alexander E.
Sudarshan, T. S.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (06) : 1540 - 1544
[5] Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism
Bracht, H
Stolwijk, NA
Laube, M
Pensl, G
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (20) : 3188 - 3190
[6] Selective doping of 4H-SiC by codiffusion of aluminum and boron
Gao, Y
Soloviev, SI
Sudarshan, TS
Tin, CC
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (11) : 5647 - 5651
[7] Planar 4H-and 6H-SiC p-n diodes fabricated by selective diffusion of boron
Gao, Y
Soloviev, S
Sudarshan, TS
[J]. SOLID-STATE ELECTRONICS, 2001, 45 (12) : 1987 - 1990
[8] GHANDI SK, 1977, SEMICONDUCTOR POWER, P63
[9] ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS
GRANT, WN
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (10) : 1189 - 1203
[10] Grayscale Junction Termination for High-Voltage SiC Devices
Imhoff, Eugene
Kub, Fritz
Hobart, Karl
[J]. SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 691 - 694

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