Monte Carlo growth and in situ characterisation for AlxGa1-xAs heteroepitaxy

被引：1
作者：
Fazouan, N
Atmani, E
Djafari-Rouhani, M
Estève, A
机构：
[1] Phys Mat Lab, Fac Sci & Tech, Beni Mellal 23000, Morocco
[2] Lab Mat Condensee, Fac Sci & Tech, Mohammadia 20650, Morocco
[3] Univ Toulouse 3, Phys Solides Lab, F-31062 Toulouse, France
[4] CNRS, LAAS, F-31077 Toulouse, France
来源：
COMPUTATIONAL MATERIALS SCIENCE | 2005年 / 33卷 / 1-3期
关键词：
simulation; physisorbed molecules; photoemission current; reflection high-energy electron diffraction; AlxGa1-xAs alloy;
D O I：
10.1016/j.commatsci.2004.12.056
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a kinetic Monte Carlo model describing the growth of AlxGa1-xAs heterostructure and including a local photoemission model with reflection high-energy electron diffraction (RHEED) intensity for comparison. The model assumes growth under As rich conditions typical for molecular beam epitaxy (MBE). We have examined the AlxGa1-xAs morphology with 0 <= x <= 1 and the growth of normal and inverted interface of AlAs-GaAs system. We show, as has been observed experimentally [J. Electrochem. Soc. 129 (1982) 824; J. Vac. Sci. Technol. B 4 (2) (1986) 590], a roughness AlxGa1-xAs front profile for high Al concentrations and a difference in the quality of the two AlAs-GaAs interfaces due to a lower diffusivity of Al atoms compared to Ga atoms. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：382 / 387
页数：6
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