Multimode Fabry-Perot Conductance Oscillations in Suspended Stacking-Faults-Free InAs Nanowires

被引:79
|
作者
Kretinin, Andrey V. [1 ]
Popovitz-Biro, Ronit [2 ]
Mahalu, Diana [1 ]
Shtrikman, Hadas [1 ]
机构
[1] Weizmann Inst Sci, Braun Ctr Submicrometer Res, Dept Condensed Matter Phys, IL-76100 Rehovot, Israel
[2] Weizmann Inst Sci, Elect Microscopy Unit, IL-76100 Rehovot, Israel
关键词
Molecular-beam epitaxy; InAs nanowires; coherent electron transport; Fabry-Perot oscillations; FIELD-EFFECT TRANSISTORS; SEMICONDUCTOR NANOWIRES; QUANTUM DOTS; BALLISTIC TRANSPORT; INTERFERENCE; SUPERCURRENT; NANOTUBES; CONTACTS; DEVICES;
D O I
10.1021/nl101522j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report on observation of coherent electron transport in suspended high-quality. InAs nanowire-based devices. The InAs nanowires were grown by low-temperature gold-assisted vapor-liquid-solid molecular-beam-epitaxy. The high quality of the nanowires was achieved by removing the typically found stacking faults and reducing possibility of Au incorporation. Minimizing substrate-induced scattering in the device was achieved by suspending the nanowires over predefined grooves. Coherent transport involving more than a single one-dimensional mode transport was observed in the experiment and manifested by Fabry-Perot conductance oscillations. The length of the Fabry-Perot interferometer, deduced from the period of the conductance oscillations, was found to be close to the physical length of the device. The high oscillations visibility imply nearly ballistic electron transport through the nanowire.
引用
收藏
页码:3439 / 3445
页数:7
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